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Born in 1973 in Prague, Czech
Republic, Bohuslav Rezek graduated from
Physics at the Faculty of Mathematics and Physics at the Charles University in
Prague, continued with PhD. at Academy
of Sciences of the
Czech Republic (ASCR) in a group of Dr. Jan Kočka
on the charge transport in amorphous and microcrystalline silicon with high
lateral resolution by the use of scanning probe techniques. During his PhD.
he spent several research stays in a group of Prof. Martin Stutzmann at the Walter Schottky
Institut, Technische Universität München. There he
worked with Dr. Christoph Nebel
on development of large grain silicon thin films using interference laser crystallization
of amorphous silicon layers and on their investigation by laser beam induced
currents with a sub-micrometer lateral resolution, with a special view to
optical and electronic properties of grain boundaries. After receiving PhD.
degree in 2001, he continued in the group of Prof. Stutzmann
as a postdoctoral researcher on the project for diamond devices and sensors
where he focused on a study and modification of hydrogen terminated diamond
surfaces and their electrolytic interfaces. In 2002 he joined the
Nanotechnology Group at the Swiss Federal Institute of Technology, where he
was working on a guided assembly of colloidal nanoparticles
at solid state surfaces. Since 2004 he worked at the Diamond Research Center
of AIST in Tsukuba, Japan, doing research on surface
(bio)-functionalized diamond devices. In 2006 he became research team leader
and Purkyně Fellow at the Institute of Physics ASCR
in Prague, Czech Republic. His research team
is focused on nano-interfaces of semiconductors and organic materials towards
opto-electronic and bio-electronic applications. Main interests lie in
characterization and modification of material, electronic, and chemical
properties by local probe techniques as well as in guided assembly of organic
and inorganic nanostructures. He is the author or co-author of over 100
scientific articles in international peer-reviewed journals that were cited
more than 500 times and of several patents (3) and patent applications.
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