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Kamil Olejník
olejnik@fzu.cz Department of spintronics and nanoelectronics Institute of Physics, Academy of Sciences of the Czech Republic Fyzikální ústav AV ČR, v. v. i. Cukrovarnická 10/112, 162 00 Praha 6 Czech Republic Room F 39 Tel. : + 420 220318 589 |
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List of publications:
Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
Rev. Mod. Phys. in press (2014) xxx - xxx.
Systematic study of magnetic linear dichroism and birefringence in (Ga,Mn)As
Phys. Rev. B 89 (2014) 085203(1) - 085203(14).
The essential role of carefully optimized synthesis for elucidating intrinsic material properties of (Ga,Mn)As
Nat. Commun. 4 (2013) 1422(1) - 1422(8).
Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling
Appl. Phys. Lett. 102 (2013) 192404(1) - 192404(4).
Experimental observation of the optical spin-orbit torque
Nature Photon. 7 (2013) 492 - 498.
T. Jungwirth, J. Wunderlich, K. Olejnik
Spin Hall effect devices
Nature Mater. 11 (2012) 382 - 390.
Experimental observation of the optical spin transfer torque
Nature Phys. 8 (2012) 411 - 415.
Detection of Electrically Modulated Inverse Spin Hall Effect in an Fe/GaAs Microdevice
Phys. Rev. Lett. 109 (2012) 076601(1) - 076601(5).
Strain control of magnetic anisotropy in (Ga,Mn)As microbars
Phys. Rev. B 83 (2011) 115312(1) - 115312(12).
Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As
Phys. Rev. Lett. 105 (2010) 227201(1) - 227201(4).
Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal
Phys. Rev. B 81 (2010) 104402(1) - 104402(5).
Free carrier induced substrate heating of the epitaxially grown GaMnAs
J. Cryst. Growth 311 (2009) 2132 - 2134.
Etching enhanced annealing of GaMnAs layers
J. Cryst. Growth 311 (2009) 2151 - 2154.
Low voltage control of ferromagnetism in a semiconductor p-n junction
New J. Phys. 11 (2009) 023008-1 - 023008-9.
The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices
J. Magn. Magn. Mater. 321 (2009) 1001 - 1008.
Magneto crystalline anisotropies in (Ga,Mn)As: A systematic theoretical study and comparison with experiment
Phys. Rev. B 80 (2009) 155203-1 - 155203-29.
Imaging of interstitial atoms in Ga1-xMnxAs layers by means of X-ray diffuse scattering
J. Appl. Crystallogr. 41 (2008) 544 - 547.
Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As
Phys. Rev. Lett. 101 (2008) 077201-1 - 077201-4.
Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As
Phys. Rev. B 78 (2008) 054403-1 - 054403-4.
Applicability of magic angle for angle-resolved X-ray photoelectron spectroscopy of corrugated SiO2/Si surfaces: Monte Carlo calculations
Surf. Sci. 602 (2008) 2581 - 2586.
Tunneling anisotropic magnetoresistance in Multilayer-(Co/Pt)/AlOx/Pt structures
Phys. Rev. Lett. 100 (2008) 087204-1 - 087204-4.
Light-induced magnetization precession in GaMnAs,
Appl. Phys. Lett. 92 (2008) 122507 - 122512.
Laser-Induced Precession of Magnetization in GaMnAs
IEEE Trans. Magn. 44 (2008) 2674 - 2677.
Coherent control of magnetization precession in ferromagnetic semiconductor (Ga,Mn)As
Appl. Phys. Lett. 93 (2008) 232505-1 - 232505-3.
Location of Mn sites in GaMnAs thin films studied by means of X-ray diffuse scattering
Acta Crystallogr. A 64 (2008) C555 - C555.
Photoelectron spectroscopy from randomly corrugated surfaces
Surf. Sci. 602 (2008) 1440 - 1446.
Character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
Phys. Rev. B 76 (2007) 125206(1) - 125206(9).
Substrate temperature changes during molecular beam epitaxy growth of GaMnAs
J. Appl. Phys. 102 (2007) 083536(1) - 083536(5).
Anisotropic magnetoresistance components in (Ga,Mn)As,
Phys. Rev. Lett. 99 (2007) 147207(1) - 147207(4).
Attenuation of photoelectrons and Auger electrons leaving nickel deposited on a gold surface
Surf. Interface Anal. 39 (2007) 916(1) - 921(6).
Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence
Phys. Rev. B 74 (2006) 245205(1) - 245205(9).
Elastic electron backscattering from flat and rough Si surfaces
J. Electron. Spectrosc. 152 (2006) 100 - 106.
Location of Mn sites in ferromagnetic Ga1-xMnx As studied by means of X-ray diffuse scattering holography
J. Appl. Crystallogr. 39 (2006) 735 - 738.
Angular-resolved photoelectron spectroscopy of corrugated surfaces
Surf. Sci. 595 (2005) 212 - 222.
Photoelectron escape from iron oxide
Surf. Sci. 572 (2004) 93 - 102.
Surface Coverage Of Polyaniline-Coated Silica Gels
Acta Phys. Slov. 53 (2003) 121 - 127.