Dr. Jan Kuneš

e-mail: kunes(at)fzu.cz
tel: +420 220 318 494
Institute of Physics
Academy of Sciences
Cukrovarnicka 10
Praha 6 16253
CZECH REPUBLIC

List of publications
Conferences and presentations
Press coverage

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Center for Computational Materials Science


Scientific Curriculum Vitae
Jan Kuneš studied physics at the Faculty of Mathematics and Physics of the Charles University in Prague  in  1992-1997.  After a  brief  romance  with  experimental physics  at the University  of Salford, U.K.  he  persued his postgradual  studies with Dr. Pavel Novák at the Institute of Physics of the Czech Academy of Sciences in Prague and as a long-term visitor at the Institute of Solid State and Materials Research in Dresden. After finishing his PhD in 2002 he joined the group of Prof. Warren Pickett at the University of California Davis where he stayed till the fall of 2005. In 2006 joined Kuneš the Center for Electronic Correlations and Magnetism at the University of Augsburg, Germany, supported by the Alexander von Humboldt Research Fellowship (2006-2007) and continued as a research associate.
In 2009 he was awarded the Purkyně Fellowship of the Czech Academy of Sciences. (cv)

Kuneš's areas of research are computation of the electronic structure of materials using bandstrucutre methods (density functional theory), numerical many-body approaches to strong electronic correlations (dynamical mean-field theory, quantum Monto-Carlo methods), relativistic effects (spin-orbit coupling) and magnetism.
          2 PhD positions available
in the field of electronic structure calculations and dynamical mean-field theory.
(for details use e-mail)

Recent projects

Wannier function
Spin-up and down parts of
the J=1/2 Wannier orbital
Construction of Wannier orbitals with wien2k

We have developed and interface between the banstructre code wien2k and wannier90 software for calculation of so called maximally localized Wannier orbitals. This allows us to construct effective Hamiltonians of materials. One of the first applications includes Ir compounds with strong spin-orbit coupling where spin-projection is no more a good quantum number.
charge fluctuations
Charge fluctuations in Yb f-shell
Fluctuating vs intermediate valence - valence transition in Yb under pressure

The 4f shell of Yb can accomodate 13 or 14 electrons depending on a particular compound. This near degenracy of f13 and f14 valence states has deep consequences. Using LDA+DMFT we instigate continuous transition between the f13 and f14 valence states in elemental Yb induced by pressure and discuss it in terms of fluctuating and intermediate valence concepts.

Fluctuating valence and valence transition in Yb (presentation pdf)
pyrite structure
Pyrite crystal structure of NiS2
Metal-insulator transition in NiS2-xSex

The NiS2-xSex solid solution provides a model system where the trantion between metallic phase and the Mott insulator can be tuned by Se content, pressure or temperature. Using LDA+DMFT we show that, contrary to common claims, the transition is essentially controlled by varying hybridization gap  within the S(Se) p-band related to the bond length of the S-S (Se-Se) dimer.



Is NiS2 a charge-transfer insulator? (presentation pdf)
MnO
Closing of the charge gap in MnO
Simultaneous spin and Mott transition under pressure 

MnO is a prototypical Mott insulator, which undergoes several transtions at high pressure (~ 100 GPa): structural (NaCl -> NiAs structures), local moment collapse (HS -> LS transition), volume collapse (within NiAs structure), Mott transtition (insulator -> metal). Using combination of LDA hamiltonian and dynamical mean-field theory (LDA+DMFTT approach) we study nature and relationships of these transitions. Hematite (Fe2O3) is isoelectronic to MnO and exhibits similar behavoir


Crystal-field driven Mott transition in MnO
under pressure (presentation pdf)

NiO bands
Generalized bandstructure of NiO
Dynamical  mean-field  (LDA+DMFT) investigation
of charge-transfer materials

NiO is a prominent example of so called charge-transfer insulator (a subset of Mott insulators). To describe the physics of charge-transfer materials ligand state (oxygen p-state here) must be explicitely included in the hamiltonian. Using LDA+DMFT we study the single-particle spectra (PES, IBS, ARPES) of stociometric and hole-doped NiO.









NiO - hole doping and bandstructure of charge-transfer
insulator (presentation pdf)
freeblast
3rd pitch of Freeblast, Yosemite
Pushing my grade in trad climbing

Older projects