Charge Transport Measurements at the Nanoscale using a Multi-Tip STM

Recently we developed an ultra-compact, ultra-stable four-tip STM for charge transport measurements at the nanoscale. The capabilities of this instrument are demonstrated in two case studies. First, electrical measurements on freestanding GaAs nanowires are presented. III-V semiconductor nanowires are promising building blocks for novel semiconductor devices in future electronic and opto-electronic applications such as solar cells. While the growth morphology of these nanowires is easily characterized, the electrical characterization is much harder.